1000 ohm-cm) - SiUc101d05C1deg10R1000 Te Notice: It is suggested toSingle crystal Si, Conductivity: N type ( undoped) Resistivity: >1000 ohm CM Size: 4" diameter x 0. 5 mm Orientation: (111)with 10 degree miscut towards <112><110> , Polish: One side polished Surface roughness, Ra: < 5A (RMS) Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater"> 1000 ohm-cm) - SiUc101d05C1deg10R1000 Te Notice: It is suggested to"> 1000 ohm-cm) - SiUc101d05C1deg10R1000 Te Notice: It is suggested toSingle crystal Si, Conductivity: N type ( undoped) Resistivity: >1000 ohm CM Size: 4" diameter x 0. 5 mm Orientation: (111)with 10 degree miscut towards <112><110> , Polish: One side polished Surface roughness, Ra: < 5A (RMS) Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater"> 1000 ohm-cm) - SiUc101d05C1deg10R1000 Te Notice: It is suggested to"> 1000 ohm-cm) - SiUc101d05C1deg10R1000 Te Notice: It is suggested toSingle crystal Si, Conductivity: N type ( undoped) Resistivity: >1000 ohm CM Size: 4" diameter x 0. 5 mm Orientation: (111)with 10 degree miscut towards <112><110> , Polish: One side polished Surface roughness, Ra: < 5A (RMS) Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater"> Si Wafer (111) with 10 degree miscut towards <112><110>, 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm) - SiUc101d05C1deg10R1000 Te Notice: It is suggested to – controllermqm.eu

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Si Wafer (111) with 10 degree miscut towards <112><110>, 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm) - SiUc101d05C1deg10R1000 Te Notice: It is suggested to

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1000 ohm-cm) - SiUc101d05C1deg10R1000 Te Notice: It is suggested to">
Description

Notice: It is suggested to use an external hard drive to keep an instant backup of the collected data

Orientation tolerance + / - 0

Impregnated diamond blade with Wear-resistant TiC coating

Dimension: 6 mm (0

Si Wafer (111) with 10 degree miscut towards <112><110>, 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm) - SiUc101d05C1deg10R1000 Te Notice: It is suggested toSingle crystal Si, Conductivity: N type ( undoped) Resistivity: >1000 ohm CM Size: 4" diameter x 0. 5 mm Orientation: (111)with 10 degree miscut towards <112><110> , Polish: One side polished Surface roughness, Ra: < 5A (RMS) Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

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