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FLAAT GaN (0001) Template( N+ ,Si-doped) on Sapphire N+ , 2"x 15um,1sp - FmGaNSionALc50D15C1US Orientation 111A TTV: = 20um
FLAAT GaN (0001) Template( N+ ,Si-doped) on Sapphire N+ , 2"x 15um,1sp - FmGaNSionALc50D15C1US Orientation 111A TTV: = 20um
$342.12
Description
TTV: = 20um
Make wet film thickness between 10 - 5000 microns
6% Theoretical Coverage
Type: N-type(undoped)
FLAAT GaN (0001) Template( N+ ,Si-doped) on Sapphire N+ , 2"x 15um,1sp - FmGaNSionALc50D15C1US Orientation 111A TTV: = 20umResearch Grade , about 90 % usable area GaN template, N+, 2 in diameter FLAAT (Flat Layers At All Temperatures) GaN Template ( ALN buffer ) FLAAT Gallium Nitride Template, N+ (Si doped) 2 in diameter, Si doped Polarity: Ga face Carrier Concentration: > 1E18 cm^3 Nominal GaN Thickness: 15 um + 10 % Front side surface(after deposition and polish): Epi ready with, Ra< 0. 5 nm RMS (data obtained via using a white light interferometer ) Back side surface:
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