Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.6 um thick Al2O3 (Sapphire) Density: 1

Density: 1

PTFE features high-performance anti-corrosion and higher thermal resistance up to 200°C (< 10mins)

Sellenmeyer equation:                                        ho2 -1 =3

In order to keep constant pressure of inert gas inside the chamber

Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.6 um thick Al2O3 (Sapphire) Density: 1Silicon on sapphire (SOS) is a hetero epitaxialprocess for integrated circuitmanufacturing that consists of a thin layer (typically thinner than 0. 6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and militaryapplications because of its inherent resistance to radiation. U. S. Dept. of Commerce requires End User Certificate for