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Ge Single Crystal Substrate, N-type Sb-doped (100) 10x10x0.45mm 1sp, R<0.009ohm.cm CdTe Doped Zn (CZT) m 80mm 120m 2~2
Ge Single Crystal Substrate, N-type Sb-doped (100) 10x10x0.45mm 1sp, R<0.009ohm.cm CdTe Doped Zn (CZT) m 80mm 120m 2~2
$45.94
Description
m 80mm 120m 2~2
Temperature control software kit (for YUDIAN series controllers) + 15" laptop package is available at the options bar
Centrifugal acceleration: 23 g max
nuclear medicine
Ge Single Crystal Substrate, N-type Sb-doped (100) 10x10x0.45mm 1sp, R<0.009ohm.cm CdTe Doped Zn (CZT) m 80mm 120m 2~2Ge Wafer Specification Growing Method: CZ Wafer Size: 10 x 10 x0. 45 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: <0. 009 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal
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