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GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 2SP Glovebox Length: 350 m
GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 2SP Glovebox Length: 350 m
$74.75
Description
Length: 350 m
Operating Temperature 5 - 40°C
000 PSI adjust relief valve is available upon request
5% at 120 Celcius degrees / 1 H
GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 2SP Glovebox Length: 350 mGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 10x10 x 0. 5mm Polishing: two sides polished; Ra(Average Roughness) : < 0. 4 nm Doping: undoped Conductor type: Semi Insulating Resistivity: (0. 6 2. 0)E8 Ohm. cm Mobility: 5350 6380 cm^2 v. s. EPD: <5000 cm2 Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Shipping Notes
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