GaAs (111)B orientation, Semi-Insulating, undoped, 5X5x 0.625mm, 1sp Zero Diffraction Plates -Size: (LxWxT) 25 mm x

-Size: (LxWxT) 25 mm x 25 mm x 0

industrial and commercial specifications

Chemical Composition Indium (III) Chloride (InCl3) Purity Material Basis 99

20 mg / cm^2

GaAs (111)B orientation, Semi-Insulating, undoped, 5X5x 0.625mm, 1sp Zero Diffraction Plates -Size: (LxWxT) 25 mm xGaAs single crystal wafer Growing Method: VGF Orientation: (111)B Primary Flat: EJ(0 11)+ 0. 5 deg; Secondary Flat: EJ( 211) Size: 5X5 x 0. 625mm Polishing: One side polished Doping: undoped Conductor type: Semi Insulating Resistivity:(1. 57 3. 86)E8 ohm. cm Carrier Concentration: N A Mobility: (4120 5860) cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces